s mhop microelectronics c orp. a STB31L01 symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) typ 100v 26a 49 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-263 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed a a ver 1.1 www.samhop.com.tw sep,20,2012 1 details are subject to change without notice. t c =25 c w p d c -55 to 175 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 2 c/w thermal resistance, junction-to-case r jc t c =70 c a t c =70 c w 26 76 75 g r e r r p p r p p o r r er ee ooe stb series to-263(dd-pak) g g s s d d e as single pulse avalanche energy c mj 36
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 49 g fs s c iss 1460 pf c oss 88 pf c rss 75 pf q g 25 nc 23 66 14 t d(on) 26 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =13a v ds =10v , i d =13a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 60 b f=1.0mhz b STB31L01 ver 1.1 www.samhop.com.tw sep,20,2012 2 v sd nc q gs nc q gd 2.6 9.3 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =13a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =4a 0.79 1.3 v notes v ds =50v,i d =13a,v gs =10v a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j = 25 c,l=0.5mh,v dd =50v.(see figure13) _ _ 1 2.0 3 22
i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) 40 32 24 16 0 0 0.5 1.0 1.5 2.0 2.5 3.0 25 20 15 10 5 0 0 0.8 4.8 4.0 3.2 2.4 1.6 8 v gs =10v -55 c 25 c tj = 125 c STB31L01 ver 1.1 www.samhop.com.tw sep,20,2012 3 tj( c) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 120 100 80 60 40 20 1 2.2 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua v gs =10v 2.0 v gs =10v i d =13a 40 32 24 16 8 1 v gs =6v v gs =5v v gs =4v
STB31L01 ver 1.1 www.samhop.com.tw sep,20,2012 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 180 150 120 90 60 30 0 2468 10 0 10 1 00.3 20 1.5 0.6 0.9 1.2 1800 1500 1200 900 600 300 0 10 15 20 25 30 10 8 6 4 2 0 048 12 16 20 24 28 32 v ds =50v i d =13a 0.1 1 10 100 100 10 1 0.3 125 c 75 c 25 c i d =13a 25 c 125 c 75 c ciss coss crss 110 100 1 10 100 500 vds=50v,id=1a vgs=10v 60 6 dc 1 0 0 u s 1 0ms 1 m s 0 5 r ds (on) l imit v gs =10v single pulse t a =25 c td(on) tr td(off ) tf
STB31L01 www.samhop.com.tw sep,20,2012 5 ver 1.1 t p v (br )dss i as 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 unclamped inductive test circuit unclamped inductive waveforms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r(t),normalized effective transient thermal impedance r g i as 0.01 t p d.u.t l v ds + - dd 20v v
STB31L01 ver 1.1 www.samhop.com.tw sep,20,2012 6
to-263ab tube STB31L01 ver 1.1 www.samhop.com.tw sep,20,2012 8
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